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Factory direct sales of 3mm borderless transparent infrared receiving tube photosensitive transistor SGPT324CL full image
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Attributes
Key attributes
Place of origin
China
Material
Others
Product code
810591823728

Factory Address: Building C, Baoyicheng Science and Technology Park, Gelan Louis, Dahe Community, Guanhu Street, Longhua District, Shenzhen City, Guangdong Province

Infrared receiving tube photosensitive transistor SGPT324CL

For detailed parameters, please download the "Product Specification Sheet" from the company's website.

Parameters: Spectral bandwidth 400- 1100nm, magnification (Hfe)1000- 1800.

Pin position: Pin 1 emitter (long pin side), pin 2 collector (short pin side).

Size: feet Min 24.0 mm long, straight after: 3.0 + / - 0.2, height: 5.1 + / 0.3 transparent endless (3 mm)

Usage: Household appliances, office appliances, security systems, etc.

Packaging :1000 pieces per pack

Factory direct sales of 3mm borderless transparent infrared receiving tube photosensitive transistor SGPT324CL pic 1


Factory direct sales of 3mm borderless transparent infrared receiving tube photosensitive transistor SGPT324CL pic 2

 

Special reminder: This series of products are phototransistors. Please pay attention to the difference from photodiodes.

 

Comparison of the differences between photodiodes and phototransistors:

 

Abbreviation: Photodiode -PD Phototransistor -PT.

2. Pin Names: The two pins of a photodiode are the positive and negative terminals, while the two pins of a phototransistor are the collector and the emitter.

3. Chip structure: The photodiode is PN, and the phototransistor is NPN or PNP.

4. Response speed: Photodiodes have a fast response, at the nanosecond level, while phototransistors have a slow response, at the microsecond level.

5. Internal amplification characteristics of devices: Photodiodes do not have internal amplification, while phototransistors do, ranging from hundreds of times to hundreds of thousands of times. Different products have different amplification factors.

6. Output linearity: The output linearity of a photodiode is good, while that of a phototransistor is poor.

7. Photodiodes are generally used in reverse, that is, the negative terminal is connected to the high-level terminal and the positive terminal to the low-level terminal. The flow direction of the photosensitive current is from the negative terminal to the positive terminal. NPN type phototransistors typically have the collector connected to the high-level terminal and the emitter connected to the low-level terminal.

 

Our company specializes in manufacturing infrared receivers, photodiodes, phototransistors, photoelectric switches, photoelectric sensors, etc. If the product you need is not included in the sample, we can provide your requirements and our company can develop and design new products according to your requirements.

 

Round-head photosensitive transistor

Factory direct sales of 3mm borderless transparent infrared receiving tube photosensitive transistor SGPT324CL pic 3

Flat-head photosensitive transistor

Factory direct sales of 3mm borderless transparent infrared receiving tube photosensitive transistor SGPT324CL pic 4

Side-view phototransistors and other shaped phototransistors

Factory direct sales of 3mm borderless transparent infrared receiving tube photosensitive transistor SGPT324CL pic 5

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Dual-crystal photosensitive transistor
Factory direct sales of 3mm borderless transparent infrared receiving tube photosensitive transistor SGPT324CL pic 7

 

SMD surface mount phototransistor
Factory direct sales of 3mm borderless transparent infrared receiving tube photosensitive transistor SGPT324CL pic 8

 

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Factory direct sales of 3mm borderless transparent infrared receiving tube photosensitive transistor SGPT324CL
≥10
$0.03
Note: The current price is EXW. Please discuss the final delivered price with the supplier.
Color
SGPT324CL
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